Chengshan Xue et al 2004 Nanotechnology 15 724 doi:10.1088/0957-4484/15/7/002
Chengshan Xue, Qinqin Wei, Zhencui Sun, Zhihua Dong, Haibo Sun and Liwei Shi
Show affiliationsGaN nanowires were synthesized by ammoniating Ga2O3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering. The cylindrical structures were as long as several micrometres, with diameters ranging between 5 and 40 nm. X-ray diffraction (XRD, Rigaku D/max-rB Cu Kα), scanning electronic microscope (SEM, HitachiH-8010) and high-resolution TEM (HRTEM) results show that most of the GaN nanowires have a single-crystal hexagonal wurtzite structure with major axis [001] alignment. A minority of them are polycrystalline, composed of micrograins with different growth orientations.
81.07.-b Nanoscale materials and structures: fabrication and characterization
61.46.-w Structure of nanoscale materials
Issue 7 (July 2004)
Received 13 November 2003
Published 8 April 2004
Chengshan Xue et al 2004 Nanotechnology 15 724
Zuxin Ye et al 2008 Nanotechnology 19 085709
Zuxin Ye et al 2009 Nanotechnology 20 045704
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