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Miniband transport and oscillations in semiconductor superlattices

Álvaro Perales1, Luis L Bonilla2 and Ramón Escobedo2

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We present and analyse solutions of a recent derivation of a drift-diffusion model of miniband transport in strongly coupled superlattices. The model is obtained from a single-miniband Boltzmann–Poisson transport equation with a BGK (Bhatnagar–Gross–Krook) collision term by means of a consistent Chapman–Enskog expansion. The reduced drift-diffusion equation is solved numerically and travelling field domains and current oscillations are obtained. A broad range of frequencies can be achieved, depending on the model parameters, in good agreement with available experiments on GaAs/AlAs superlattices.


PACS

66.30.H- Self-diffusion and ionic conduction in nonmetals

68.47.Fg Semiconductor surfaces

68.35.Fx Diffusion; interface formation

Subjects

Semiconductors

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 4 (April 2004)

Received 1 October 2003

Published 20 February 2004



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