M S M Saifullah et al 2002 Nanotechnology 13 659 doi:10.1088/0957-4484/13/5/323
A reliable scheme for fabricating sub-5 nm co-planar junctions for single-molecule electronics
M S M Saifullah1, T Ondarçuhu2, D K Koltsov1, C Joachim2 and M E Welland1
Show affiliationsWe demonstrate a high yield production scheme to fabricate sub-5 nm co-planar metal–insulator–metal junctions. This involves determining the relationship between the actual gap between the metallic junctions for a given designed gap, and the use of weak developers with ultrasonic agitation to process the exposed resist. This results in an improved process to achieve narrow inter-electrode gaps. The gaps were imaged using an AFM equipped with a carbon nanotube tip to achieve a high degree of accuracy in measurement. The smallest gap unambiguously measured was ~ 2 nm. Gaps with ≤ 5 nm spacing were produced with a very high yield of about 75% for a designed inter-electrode distance of 0 nm. The leakage resistance of the gaps was found to be of the order of 1012 Ω. The entire junction structure was designed to be co-planar to better than 1 nm over 1 μ m2.
- PACS
- Subjects
-
Surfaces, interfaces and thin films
- Dates
-
Issue 5 (October 2002)
Received 12 August 2002, in final form 4 September 2002
Published 20 September 2002
-
A reliable scheme for fabricating sub-5 nm co-planar junctions for single-molecule electronics
M S M Saifullah et al 2002 Nanotechnology 13 659
-
A new family of higher order nonlinear degenerate parabolic equations
Süleyman Ulusoy 2007 Nonlinearity 20 685
-
High power density supercapacitors using locally aligned carbon nanotube electrodes
Chunsheng Du et al 2005 Nanotechnology 16 350
-
Are simultaneous Bell measurements possible?
Karl Svozil 2006 New J. Phys. 8 39
-
Can ethanol alone meet California's low carbon fuel standard? An evaluation of feedstock and conversion alternatives
Yimin Zhang et al 2010 Environ. Res. Lett. 5 014002
-
The water intensity of the transitional hydrogen economy
Michael E Webber 2007 Environ. Res. Lett. 2 034007
-
Massive Star Formation in a Gravitationally Lensed H II Galaxy at z = 3.357
R. A. E. Fosbury et al. 2003 ApJ 596 797
-
The need and challenge for Environmental Research Letters
Daniel M Kammen 2006 Environ. Res. Lett. 1 010201
-
The complex network of musical tastes
Javier M Buldú et al 2007 New J. Phys. 9 172
-
New Candidates for Recent Asteroid Breakups
D. Nesvorný and D. Vokrouhlický 2006 The Astronomical Journal 132 1950
Users also read
What's this?- The fabrication of sub-10 nm planar electrodes and their use for a molecule-based transistor
- High-pressure nanolithography using low-energy electrons from a scanning tunnelling microscope
- Combing a carbon nanotube on a flat metal-insulator-metal nanojunction
using electron beam lithography Related review articles
What's this?- Graphene field-effect transistors
- Present status of amorphous In–Ga–Zn–O thin-film transistors
- Application and electronic structure of high-permittivity dielectrics