Stephen B Cronin et al 2002 Nanotechnology 13 653 doi:10.1088/0957-4484/13/5/322
Stephen B Cronin1, Yu-Ming Lin2, Oded Rabin3, Marcie R Black2, Jackie Y Ying4, Mildred S Dresselhaus1,2, Pratibha L Gai5, Jean-Paul Minet6 and Jean-Paul Issi6
Show affiliationsTechniques are presented for making ohmic contacts to nanowires with a thick oxide coating. Although experiments were carried out on Bi nanowires, the techniques described in this paper are generally applicable to other nanowire systems. Metal electrodes are patterned to individual Bi nanowires using electron beam lithography. Imaging the chemical reaction on the atomic scale with in situ high-resolution transmission electron microscopy shows that annealing in H2 or NH3 can reduce the nanowires' oxide coating completely. The high temperatures required for this annealing, however, are not compatible with the lithographic techniques. Low-resistance ohmic contacts to individual bismuth nanowires are achieved using a focused ion beam (FIB) to first sputter away the oxide layer and then deposit Pt contacts. By combining electron beam lithography and FIB techniques, ohmic contacts stable from 2 to 400 K are successfully made to the nanowires. A method for preventing the burnout of nanowires from electrostatic discharge is also developed.
Surfaces, interfaces and thin films
Issue 5 (October 2002)
Received 24 July 2002, in final form 27 August 2002
Published 16 September 2002
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