R Bennewitz et al 2002 Nanotechnology 13 499 doi:10.1088/0957-4484/13/4/312
Atomic scale memory at a silicon surface
R Bennewitz1,2, J N Crain1, A Kirakosian1, J-L Lin, J L McChesney1, D Y Petrovykh1 and F J Himpsel1
Show affiliationsThe limits of pushing storage density to the atomic scale are explored with a memory that stores a bit by the presence or absence of one silicon atom. These atoms are positioned at lattice sites along self-assembled tracks with a pitch of five atom rows. The memory can be initialized and reformatted by controlled deposition of silicon. The writing process involves the transfer of Si atoms to the tip of a scanning tunnelling microscope. The constraints on speed and reliability are compared with data storage in magnetic hard disks and DNA.
- PACS
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68.47.Fg Semiconductor surfaces
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
- Subjects
- Dates
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Issue 4 (August 2002)
Received 29 April 2002
Published 4 July 2002
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Atomic scale memory at a silicon surface
R Bennewitz et al 2002 Nanotechnology 13 499
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