Z F Krasil'nik et al 2002 Nanotechnology 13 81 doi:10.1088/0957-4484/13/1/318
Z F Krasil'nik1, P Lytvyn2, D N Lobanov1, N Mestres3, A V Novikov1, J Pascual4, M Ya Valakh2 and V A Yukhymchuk2
Show affiliationsWe investigate self-assembled nanoislands in heteroepitaxial GeSi systems by means of atomic force microscopy and micro-Raman scattering techniques. We show that the surface diffusion of Si atoms from the substrate to the islands is strongly enhanced when the temperature increases, giving rise to a wider stability range of pyramid-shaped volumes.
68.55.A- Nucleation and growth
68.55.-a Thin film structure and morphology
68.37.Ps Atomic force microscopy (AFM)
Issue 1 (February 2002)
Received 11 May 2001, in final form 27 September 2001
Published 18 January 2002
Z F Krasil'nik et al 2002 Nanotechnology 13 81
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