A V Dvurechenskii et al 2002 Nanotechnology 13 75 doi:10.1088/0957-4484/13/1/317
Electronic structure of Ge/Si quantum dots
A V Dvurechenskii1, A V Nenashev2 and A I Yakimov1
Show affiliationsWe have investigated theoretically the strain distribution in pyramid-shaped Ge/Si quantum dots (QDs) and their environment, using the atomistic approach and the Green function technique. Taking into account the results of strain calculations, we have studied the hole discrete spectrum by the tight-binding method. Energy levels, their dependence on dot size and wavefunction density distributions have been obtained. We have proposed a method for calculation of the Landé factor for localized states in QDs and calculated the value of the g-factor for the ground state in the Ge/Si dot. We have developed a theoretical model of spatially indirect excitons and excitonic complexes, localized on the QD. The binding energy and optical transition energy have been calculated for excitonic complexes with different numbers of electrons and holes.
- PACS
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71.20.Mq Elemental semiconductors
71.18.+y Fermi surface: calculations and measurements; effective mass, g factor
- Subjects
- Dates
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Issue 1 (February 2002)
Received 12 September 2001, in final form 24 October 2001
Published 18 January 2002
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Electronic structure of Ge/Si quantum dots
A V Dvurechenskii et al 2002 Nanotechnology 13 75
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