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Resonant parametric generation of infrared radiation on intersubband transitions in low-dimensional semiconductor heterostructures

A A Belyanin1,2, F Capasso3, V V Kocharovsky1,2, Vl V Kocharovsky2, D S Pestov2 and M O Scully1,4

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A new scheme for the generation of coherent radiation on the intersubband transition without population inversion between subbands is presented. The scheme is based on the resonant nonlinear mixing of the optical laser fields on the two interband transitions that are intracavity generated in the same active region. The two-wavelength lasing on the interband transitions can be achieved at a substantially lower threshold current than gain on the intersubband transition. This may ensure cw room-temperature operation. Due to the parametric, inversionless nature of generation, the lasers proposed are especially promising for long-wavelength operation above 20 µm.


PACS

42.60.Jf Beam characteristics: profile, intensity, and power; spatial pattern formation

42.60.Lh Efficiency, stability, gain, and other operational parameters

42.55.Px Semiconductor lasers; laser diodes

42.60.By Design of specific laser systems

61.80.Ba Ultraviolet, visible, and infrared radiation effects (including laser radiation)

Subjects

Optics, quantum optics and lasers

Condensed matter: structural, mechanical & thermal

Dates

Issue 4 (December 2001)

Received 7 July 2001

Published 27 November 2001



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