R I Batalov et al 2001 Nanotechnology 12 409 doi:10.1088/0957-4484/12/4/303
R I Batalov1, R M Bayazitov1, I B Khaibullin1, E I Terukov2 and V Kh Kudoyarova2
Show affiliationsSemiconducting iron disilicide (β-FeSi2) precipitate layers were synthesized by means of Fe+ implantation into Si(100) at an energy of 40 keV and a dose of 1×1016 cm-2 followed by nanosecond pulsed ion-beam treatment of the implanted Si layers. Glancing incidence x-ray diffraction (GIXRD) and atomic force microscopy (AFM) were employed for the structural characterization, and optical absorption and photoluminescence (PL) spectroscopies were used for the optical characterization of the precipitate layers formed. The GIXRD results indicate the formation of oriented β-FeSi2 precipitates surrounded by a polycrystalline Si matrix. AFM data show the precipitate sizes to be in the range of 25-90 nm. The results of measuring the optical absorption indicate that the formed precipitates have a direct-band structure with an energy gap of 0.83 eV. It is shown that the 1.5 µm PL signal of β-FeSi2 precipitates is observed up to a temperature of 210 K and does not saturate up to the pump power of 250 mW.
78.55.Hx Other solid inorganic materials
81.20.Fw Sol-gel processing, precipitation
73.20.At Surface states, band structure, electron density of states
68.37.Ps Atomic force microscopy (AFM)
Condensed matter: electrical, magnetic and optical
Issue 4 (December 2001)
Received 24 July 2001, in final form 26 October 2001
Published 27 November 2001
R I Batalov et al 2001 Nanotechnology 12 409
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