A Aassime et al 2001 Nanotechnology 12 96 doi:10.1088/0957-4484/12/2/304
A sensitive and fast radio frequency single-electron transistor
A Aassime1,2, P Delsing1 and T Claeson1
Show affiliationsWe have fabricated an aluminium single-electron transistor (SET) and characterized it at frequencies up to 8 MHz by measuring the reflected signal from a 331 MHz resonant tank in which the transistor is embedded. Within a bandwidth of 8 MHz, we measured the charge sensitivity of this radio-frequency SET, i.e. rf-SET, to 6.3×10-6 e/(Hz)1/2, which corresponds to the uncoupled energy sensitivity of 13
.
- PACS
- Subjects
- Dates
-
Issue 2 (June 2001)
Received 16 January 2001, in final form 23 April 2001
-
A sensitive and fast radio frequency single-electron transistor
A Aassime et al 2001 Nanotechnology 12 96
-
A determination of Planck's constant from radiometric measurements
A Razet et al 2006 Metrologia 43 367
-
Global representation of the fine structure constant and its variation
Michael E Tobar 2005 Metrologia 42 129
-
Fabrication of silicon molds for polymer optics
D Nilsson et al 2003 J. Micromech. Microeng. 13 S57
-
Ordered three-dimensional hierarchical nanostructures by nanoimprint lithography
Fengxiang Zhang and Hong Yee Low 2006 Nanotechnology 17 1884
-
Yang-Mills theory from non-critical string
Kazuo Ghoroku 2000 J. Phys. G: Nucl. Part. Phys. 26 233
-
In-situ Scanning Transmission X-ray Microscopy of catalytic materials under reaction conditions
Emiel de Smit et al 2009 J. Phys.: Conf. Ser. 190 012161
-
The Estimation of the Radium Content of Radio-active Luminous Compounds
E A Owen and Winifred E Fage 1921 Proc. Phys. Soc. London 34 27
-
Holographic principle and topology change in string theory
Soo-Jong Rey 1999 Class. Quantum Grav. 16 L37
-
Crossover from the dilute to the dense phase for self-repelling polymer chains: finite size effects and relation to zero-component Landau - Ginzburg - Wilson theory
F Rother et al 1997 J. Phys. A: Math. Gen. 30 2669
Users also read
What's this?- Morphology of InGaAs/GaAs quantum wires prepared by highly controlled deep-etching techniques
- Trends in nanoelectronics
- Investigation of SiGe-heterostructure nanowires
Related review articles
What's this?- Nanoscale memory devices
- Nanomagnet logic: progress toward system-level integration
- SiC nanowires: material and devices