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Random potential device using quantum percolation phenomenon

Y Kodama and T Maekawa

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We propose a new type of electronic device in which a quantum percolation phenomenon is utilized. We calculate steady-state wavefunctions in random potential systems by the steepest-descent method and made clear the relation between the correlation length of the wavefunction and the concentration and height of the random potentials. We find that the correlation length becomes minimum at an intermediate potential concentration which coincides with the classical percolation point in the case of low potential barriers. In the case of high potential barriers, the correlation length becomes minimum in a higher concentration region because of the decrease in the tunnelling probability of the electron through the random potential clusters. Finally, we investigate the appropriate concentration of random potentials for a switching device and find that the concentration should be 0.6 which is, in fact, the classical percolation concentration.


PACS

73.63.-b Electronic transport in nanoscale materials and structures

73.40.Gk Tunneling

Subjects

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 2 (June 1999)

Received 24 November 1998



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