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Nano-patterning and single electron tunnelling using STM

Xiaoming Hu-+,++, D Sarid-+ and P von Blanckenhagen++

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A scanning tunnelling microscope with a gold tip was used to create clusters and form nano-dots, lines and corrals on a clean stepped Si(111) surface by applying a series of bias pulses to the tip-sample tunnelling junction. Nano-dots with diameters as small as a few nm can be realized. By decreasing the distances between nano-dots, it is possible to create continuous nano-lines of a few nm wide and over a few hundred nm long, which can be used as connections between micro- and nano-electronic components. A nano-corral of about 40 nm in diameter formed by many Au dots of a few nm in diameter each was also created on the Si(111) surface. Single electron tunnelling effects through nano-dots were studied and it was found that `Coulomb staircases' can be observed in the I-V (current-voltage) curve at room temperature through an Au tip-Au cluster-Si substrate double junction system.


PACS

81.16.Rf Nanoscale pattern formation

81.07.-b Nanoscale materials and structures: fabrication and characterization

73.23.Hk Coulomb blockade; single-electron tunneling

81.16.Ta Atom manipulation

Subjects

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 2 (June 1999)

Received 28 September 1998



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