Y L Zhao et al 2006 Meas. Sci. Technol. 17 519 doi:10.1088/0957-0233/17/3/S11
Y L Zhao, L B Zhao and Z D Jiang
Show affiliationsBased on silicon on insulator (SOI) technology, a novel high temperature pressure sensor with high frequency response is designed and fabricated, in which a buried silicon dioxide layer in the silicon material is developed by the separation by implantation of oxygen (SIMOX) technology. This layer can isolate leak currents between the top silicon layer for the detecting circuit and body silicon at a temperature of about 200 °C. In addition, the technology of silicon and glass bonding is used to create a package of the sensor without internal strain. A structural model and test data from the sensor are presented. The experimental results showed that this kind of sensor possesses good static performance in a high temperature environment and high frequency dynamic characteristics, which may satisfy the pressure measurement demands of the oil industry, aviation and space, and so on.
73.40.Qv Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
71.55.Cn Elemental semiconductors
85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices
62.50.-p High-pressure effects in solids and liquids
85.40.Ry Impurity doping, diffusion and ion implantation technology
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 3 (March 2006)
Received 8 June 2005, in final form 6 November 2005
Published 31 January 2006
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