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An investigation into the effect of modified firing profiles on the piezoelectric properties of thick-film PZT layers on silicon

P Glynne-Jones, S P Beeby, P Dargie, T Papakostas and N M White

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Screen-printed lead zirconate titanate (PZT) layers offer possibilities both for sensing and for actuation applications. The reaction between PZT and silicon during the high temperature sintering phase is a problem when combining PZT layers with silicon microelectromechanical systems. In this study we investigate a range of longer, lower temperature firing profiles for thick-film PZT, to reduce this reaction. Methods of measuring the d 33 piezoelectric coefficient of thick-film PZT layers are reviewed and the test rig used to compare samples is described. Temperatures below 800 °C are found to be insufficient to produce sintering. At other low temperatures, longer firing times are found to be necessary in order to produce consistent results. A temperature of 800 °C for 8 h was found to produce a reduction in the level of reaction, without a serious reduction of the piezoelectric activity.


PACS

84.37.+q Electric variable measurements (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

06.20.Dk Measurement and error theory

77.22.Ch Permittivity (dielectric function)

85.85.+j Micro- and nano-electromechanical systems (MEMS/NEMS) and devices

85.40.Xx Hybrid microelectronics; thick films

07.07.Df Sensors (chemical, optical, electrical, movement, gas, etc.); remote sensing

Subjects

Condensed matter: electrical, magnetic and optical

Electronics and devices

Instrumentation and measurement

Nanoscale science and low-D systems

Dates

Issue 5 (May 2000)

Received 18 January 2000, accepted for publication 7 March 2000, in final form 7 March 2000



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