A Dargys et al 1997 J. Phys.: Condens. Matter 9 L557 doi:10.1088/0953-8984/9/39/004
Hole tunnelling from beryllium acceptors in GaAs
A Dargys, N Zurauskiene and K Bertulis
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We present experimental results on the field ionization of beryllium acceptors in micrometre AlGaAs/GaAs structures on a nanosecond timescale. At liquid helium temperature, the tunnelling ionization of beryllium was found to switch on effectively at electric fields higher than 
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- PACS
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79.70.+q Field emission, ionization, evaporation, and desorption
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- Dates
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Issue 39 (29 September 1997)
Received 14 July 1997
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Hole tunnelling from beryllium acceptors in GaAs
A Dargys et al 1997 J. Phys.: Condens. Matter 9 L557
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