M Yamaguchi et al 1997 J. Phys.: Condens. Matter 9 241 doi:10.1088/0953-8984/9/1/025
Brillouin scattering study of gallium nitride: elastic stiffness constants
M Yamaguchi
, T Yagi
, T Azuhata§, T Sota§, K Suzuki§, S Chichibu|| and S Nakamura¶
High-resolution Brillouin scattering measurements on a high-quality wurtzite gallium nitride (GaN) single crystal were carried out and elastic stiffness constants were determined.
A comparison is given with the results of a recently reported model for calculation of the elastic constants of III - V semiconductors based on the modified version of Keyes's relations. A good agreement is found between the experimental and theoretical elastic constants for GaN.
- PACS
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78.35.+c Brillouin and Rayleigh scattering; other light scattering
- Subjects
- Dates
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Issue 1 (6 January 1997)
Received 15 May 1996, in final form 13 September 1996
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Brillouin scattering study of gallium nitride: elastic stiffness constants
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