Tian Mingliang et al 1996 J. Phys.: Condens. Matter 8 3413 doi:10.1088/0953-8984/8/19/016
The temperature dependence of resistivity and thermoelectric power in lanthanum molybdenum oxide crystal 
Tian Mingliang, Mao Zhiqiang and Zhang Yuheng
Show affiliationsElectrical resistivity, voltage - current (V - I) characteristics and thermoelectric power (TEP) at various temperatures in the quasi-two-dimensional single crystal 
were measured. It was found that at 130 K the resistivity shows a metal - semiconductor transition, and the TEP has a minimum value. In the semiconducting states below 130 K, the electronic transport presents a clear non-linear behaviour. By analysis of the above data, it is indicated that above 130 K the crystal is a metal and electrons are dominant carriers; below 130 K the crystal becomes a semiconductor with a small energy gap, the two types of carrier being possibly co-existent. The anomalies of TEP and resistivity near 130 K may be associated with the formation of so-called charge-density waves due to the partial opening of a gap.
- PACS
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72.20.Pa Thermoelectric and thermomagnetic effects
71.45.Lr Charge-density-wave systems
71.20.Ps Other inorganic compounds
71.30.+h Metal-insulator transitions and other electronic transitions
- Subjects
- Dates
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Issue 19 (6 May 1996)
Received 19 December 1995, in final form 5 February 1996
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The temperature dependence of resistivity and thermoelectric power in lanthanum molybdenum oxide crystal
Tian Mingliang et al 1996 J. Phys.: Condens. Matter 8 3413
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