T Azuhata et al 1995 J. Phys.: Condens. Matter 7 L129 doi:10.1088/0953-8984/7/10/002
T Azuhata, T Sota, K Suzuki and S Nakamura
Show affiliationsWe have measured polarized Raman spectra in a 2.0 mu m GaN epitaxial layer of high quality, grown on a sapphire substrate. All symmetry-allowed optical phonons in GaN have been assigned as follows: A1(LO), 735 cm-1; A1(TO), 533 cm-1; E1(LO), 743 cm-1; E1(TO), 561 cm-1; E2, 144 and 569 cm-1. Using the Lyddane-Sachs-Teller relation, the static dielectric constants of GaN for the ordinary and extraordinary directions have been estimated as epsilon perpendicular to 0=9.28 and E/sub //0/=10.1. We have also observed quasi-LO phonons in GaN. A brief discussion on these will be given.
78.30.Fs III-V and II-VI semiconductors
Condensed matter: electrical, magnetic and optical
Issue 10 (6 March 1995)
T Azuhata et al 1995 J. Phys.: Condens. Matter 7 L129
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