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Enhancement of mobility at low temperatures in amorphous silicon hydride

R P Barclay

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The author explores the effect of carrier interaction with tail states on the mobility in amorphous silicon hydride for various model density of states profiles. Upon the assumption that multiple trapping of electrons dominates the transient response at short times, it is found that a shift in the demarcation energy, Ed*, between multiple trapping and tunnelling, to shallower energies can lead to an enhancement in the mobility for temperatures lower than 100 K.


PACS

72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

71.23.Cq Amorphous semiconductors, metallic glasses, glasses

72.20.Fr Low-field transport and mobility; piezoresistance

72.80.Ng Disordered solids

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 16 (19 April 1993)



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