A Sokolov et al 2009 J. Phys.: Condens. Matter 21 485303 doi:10.1088/0953-8984/21/48/485303
A Sokolov1,2, R Sabirianov2,3, I Sabirianov1 and B Doudin4
Show affiliationsLarge hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal–insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
71.27.+a Strongly correlated electron systems; heavy fermions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.30.+h Metal-insulator transitions and other electronic transitions
Issue 48 (2 December 2009)
Received 13 April 2009, in final form 9 September 2009
Published 30 October 2009
A Sokolov et al 2009 J. Phys.: Condens. Matter 21 485303
Yuru Wang et al 2009 Meas. Sci. Technol. 20 125101
Xiaotong Gao et al 2009 Smart Mater. Struct. 18 125018
Anastasia Doikou and Konstadinos Sfetsos 2009 J. Phys. A: Math. Theor. 42 475204
R De Luca 2009 Supercond. Sci. Technol. 22 125010
J Beau W Webber et al 2007 J. Phys.: Condens. Matter 19 415117
Zhibin Lin and Roland E Allen 2009 J. Phys.: Condens. Matter 21 485503
E van Hullebusch et al 2009 J. Phys.: Conf. Ser. 190 012184
Marcelo Zambra et al 2009 Plasma Phys. Control. Fusion 51 125003
A Rossetti et al 2009 J. Micromech. Microeng. 19 125013