A Sokolov et al 2009 J. Phys.: Condens. Matter 21 485303 doi:10.1088/0953-8984/21/48/485303
A Sokolov1,2, R Sabirianov2,3, I Sabirianov1 and B Doudin4
Show affiliationsLarge hysteretic resistance changes are reported on sub-100 nm diameter metallic nanowires including thin dielectric junctions. Bi-stable 50% switching in a double junction geometry is modeled in terms of an occupation-driven metal–insulator transition in one of the two junctions, using the generalized Poisson expressions of Oka and Nagaosa (2005 Phys. Rev. Lett. 95 266403). It illustrates how a band bending scheme can be generalized for strongly correlated electron systems. The magnetic constituents of the nanowires provide a magnetoresistive signature of the two resistance states, confirming our model and enabling a four states device application.
75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects
71.27.+a Strongly correlated electron systems; heavy fermions
73.50.Jt Galvanomagnetic and other magnetotransport effects (including thermomagnetic effects)
71.30.+h Metal-insulator transitions and other electronic transitions
Issue 48 (2 December 2009)
Received 13 April 2009, in final form 9 September 2009
Published 30 October 2009
A Sokolov et al 2009 J. Phys.: Condens. Matter 21 485303
C K Chung and T R Shih 2007 J. Micromech. Microeng. 17 2495
Roberto Casadio and Giovanni Venturi 1996 Class. Quantum Grav. 13 2715
M. Janson et al. 2010 ApJ 710 L35
Kazuhiro Hayama 2005 Class. Quantum Grav. 22 S527
Li Xiao-Hui et al 2007 Chinese Phys. 16 3681
A A Malykh et al 2003 Class. Quantum Grav. 20 L263
L Skrbek et al 1999 J. Phys.: Condens. Matter 11 7761
F. La Franca et al. 2005 ApJ 635 864
A. Golden et al. 2000 ApJ 535 373