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Structure determination of Bi/Ge(111)-(\sqrt {3}\times \sqrt {3})\mathrm
{R}30^\circ by dynamical low-energy electron diffraction analysis and scanning tunneling microscopy

Yoshiyuki Ohtsubo1,2, Shinichiro Hatta1,2, Manabu Iwata1, Koichiro Yaji1,2, Hiroshi Okuyama1 and Tetsuya Aruga1,2

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We have determined the atomic structure of the Bi/Ge(111)-(\sqrt {3}\times \sqrt
{3})\mathrm {R}30^\circ surface by dynamical low-energy electron diffraction (LEED) analysis and scanning tunneling microscopy (STM). The optimized atomic structure consists of Bi atoms which are adsorbed near the T1 sites of the bulk-truncated Ge(111) surface and form triangular trimer units centered at the T4 sites. The atomically resolved STM image was consistent with the LEED result. The structural parameters agree well with those optimized by a first-principles calculation which supports the interpretation of the electronic band splitting on this surface in terms of the giant Rashba effect.


PACS

68.35.B- Structure of clean surfaces (and surface reconstruction)

73.20.At Surface states, band structure, electron density of states

68.43.Mn Adsorption kinetics

71.70.Ej Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

61.05.jh Low-energy electron diffraction (LEED) and reflection high-energy electron diffraction (RHEED)

68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Dates

Issue 40 (7 October 2009)

Received 14 July 2009

Published 8 September 2009



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