T Hopf et al 2008 J. Phys.: Condens. Matter 20 415205 doi:10.1088/0953-8984/20/41/415205
T Hopf1, C Yang1, S E Andresen2 and D N Jamieson1
Show affiliationsStudies of electrical transients in single-crystal silicon induced by discrete low-energy (sub-20 keV) ions have been carried out at 90 K, with ionization measurements and damage accumulation in the sample being investigated. Ionization studies reveal a discrepancy between experimental results and predictions from the widely used SRIM (stopping and range of ions in matter) code, one which increases with decreasing energy: a result which has previously been suggested from studies with continuous ion beams. Damage accumulation studies of the sample also demonstrate that current models of damage build-up in silicon are inadequate at such low energies, with experiments indicating that individual ions create a much larger region of decreased charge collection efficiency outside of the small amorphous cores known to be formed by such impacts.
29.40.Wk Solid-state detectors
Accelerators, beams and electromagnetism
Instrumentation and measurement
Issue 41 (15 October 2008)
Received 7 August 2008, in final form 1 September 2008
Published 12 September 2008
T Hopf et al 2008 J. Phys.: Condens. Matter 20 415205
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