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THz operation of asymmetric-nanochannel devices

C Balocco1, M Halsall1, N Q Vinh2 and A M Song1

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The THz spectrum lies between microwaves and the mid-infrared, a region that remains largely unexplored mainly due to the bottleneck issue of lacking compact, solid state, emitters and detectors. Here, we report on a novel asymmetric-nanochannel device, known as the self-switching device, which can operate at frequencies up to 2.5 THz for temperature up to 150 K. This is, to our knowledge, not only the simplest diode but also the quickest acting electronic nanodevice reported to date. The radiation was generated by the free electron laser FELIX (Netherlands). The dependences of the device efficiency as a function of the electric bias, radiation intensity, radiation frequency and temperature are reported.


PACS

85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

78.70.Gq Microwave and radio-frequency interactions

85.30.De Semiconductor-device characterization, design, and modeling

41.60.Cr Free-electron lasers

Subjects

Accelerators, beams and electromagnetism

Condensed matter: electrical, magnetic and optical

Electronics and devices

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 38 (24 September 2008)

Received 14 March 2008

Published 21 August 2008



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