J Hass et al 2008 J. Phys.: Condens. Matter 20 323202 doi:10.1088/0953-8984/20/32/323202
J Hass, W A de Heer and E H Conrad
Show affiliationsThe electronic properties of epitaxial graphene grown on SiC have shown its potential as a viable candidate for post-CMOS electronics. However, progress in this field requires a detailed understanding of both the structure and growth of epitaxial graphene. To that end, this review will focus on the current state of epitaxial graphene research as it relates to the structure of graphene grown on SiC. We pay particular attention to the similarity and differences between graphene growth on the two polar faces, (0001) and
, of hexagonal SiC. Growth techniques, subsequent morphology and the structure of the graphene/SiC interface and graphene stacking order are reviewed and discussed. Where possible the relationship between film morphology and electronic properties will also be reviewed.
73.63.-b Electronic transport in nanoscale materials and structures
Issue 32 (13 August 2008)
Received 24 March 2008
Published 18 July 2008
J Hass et al 2008 J. Phys.: Condens. Matter 20 323202
M England and J C Eilbeck 2009 J. Phys. A: Math. Theor. 42 095210
Carlo M. Carloni Calame et al JHEP12(2006)016
Jeffrey Van Duyne et al. 2004 The Astronomical Journal 127 1959
Ryan Michael and Amy L Stuart 2009 Environ. Res. Lett. 4 015001
J R Cary et al 2007 J. Phys.: Conf. Ser. 78 012086
Olaf Stenzel 2009 J. Phys. D: Appl. Phys. 42 055312
Szymon P Malinowski et al 2008 New J. Phys. 10 075020
A S Bradley et al 2005 J. Phys. B: At. Mol. Opt. Phys. 38 4259
C W Gardiner and A S Bradley 2001 J. Phys. B: At. Mol. Opt. Phys. 34 4663