Scott A Chambers 2008 J. Phys.: Condens. Matter 20 264004 doi:10.1088/0953-8984/20/26/264004
Scott A Chambers
Show affiliationsMolecular beam epitaxy coupled with the use of activated oxygen is shown to be a powerful tool for the growth of well-defined, structurally excellent oxide semiconductor films. The basics of the methodology are discussed. Several case studies are presented to illustrate some of the physical phenomena that can be investigated; these include Cr- and Co-doped TiO2 anatase, Ti-doped α-Fe2O3 hematite, and N-doped TiO2 rutile.
81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy
Issue 26 (2 July 2008)
Received 16 October 2007
Published 9 June 2008
Scott A Chambers 2008 J. Phys.: Condens. Matter 20 264004
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