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Molecular beam epitaxial growth of doped oxide semiconductors

Scott A Chambers

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Molecular beam epitaxy coupled with the use of activated oxygen is shown to be a powerful tool for the growth of well-defined, structurally excellent oxide semiconductor films. The basics of the methodology are discussed. Several case studies are presented to illustrate some of the physical phenomena that can be investigated; these include Cr- and Co-doped TiO2 anatase, Ti-doped α-Fe2O3 hematite, and N-doped TiO2 rutile.


PACS

81.15.Hi Molecular, atomic, ion, and chemical beam epitaxy

68.55.-a Thin film structure and morphology

68.55.A- Nucleation and growth

Subjects

Surfaces, interfaces and thin films

Dates

Issue 26 (2 July 2008)

Received 16 October 2007

Published 9 June 2008



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