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The influence of inelastic relaxation time on intrinsic spin Hall effects in a disordered two-dimensional electron gas

Pei Wang and You-Quan Li

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The influence of inelastic relaxation time on the intrinsic spin Hall effects in a disordered two-dimensional electron gas with Rashba interaction is studied; we clarify the controversy as regards impurity effects in the system. We reveal that, due to the existence of inelastic scattering, the spin Hall conductivity does not vanish when the impurity concentration diminishes to zero, regardless of nonmagnetic or magnetic disorder. The spin accumulation is evaluated by using the spin Hall conductivity obtained, and an alternative route is suggested for verifying the intrinsic spin Hall effect by measuring the spin accumulation at different ratios.


PACS

72.25.Rb Spin relaxation and scattering

72.25.Dc Spin polarized transport in semiconductors

72.20.My Galvanomagnetic and other magnetotransport effects

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 21 (28 May 2008)

Received 23 January 2008, in final form 27 March 2008

Published 18 April 2008



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