D N Timms et al 1990 J. Phys.: Condens. Matter 2 10517 doi:10.1088/0953-8984/2/51/023
D N Timms, M J Cooper, R S Holt, F Itoh, T Kobaysai and H Nara
Show affiliationsDirectional Compton profiles have been measured along the (100), (110), (111), (112) and (221) crystallographic axes in GaAs using 412 keV and 59.54 keV gamma -radiation from 198Au and 241Am radioisotope sources, respectively. The results have been compared with the prediction of a pseudopotential calculation both in momentum space and in position space. The pseudopotential approach predicts the anisotropy of the valence electron distribution and is consistent with an increase in the ionic bond character compared with Ge. On the other hand, the total electron distributions are not well described due to the omission of core orthogonalisation terms.
Issue 51 (31 December 1990)
D N Timms et al 1990 J. Phys.: Condens. Matter 2 10517
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