K Karlsson et al 1990 J. Phys.: Condens. Matter 2 5265 doi:10.1088/0953-8984/2/23/018
K Karlsson, R J Needs, A Qteish and R W Godby
Show affiliationsThe electronic structure at the interface between bulk GaAs(001) and short-period superlattices of (AlAs)n(GaAs)m has been calculated using ab initio pseudopotential techniques. The results show that the valence band offsets at such interfaces are very similar to those obtained experimentally for random alloy systems, but superior transport properties are anticipated for the ordered systems.
73.20.At Surface states, band structure, electron density of states
71.15.Mb Density functional theory, local density approximation, gradient and other corrections
Condensed matter: electrical, magnetic and optical
Issue 23 (11 June 1990)
K Karlsson et al 1990 J. Phys.: Condens. Matter 2 5265
C Cheng et al 1990 J. Phys.: Condens. Matter 2 5115
B Rosenstein and I D Vagner 1990 J. Phys.: Condens. Matter 2 497
A Gordon and I D Vagner 1990 J. Phys.: Condens. Matter 2 3687
D Fleishman et al 2007 J. Phys.: Condens. Matter 19 096004
Tung-Ching Huang et al 2007 J. Phys.: Condens. Matter 19 476212
O Šipr et al 2007 J. Phys.: Condens. Matter 19 446205
Chun-Gang Duan et al 2007 J. Phys.: Condens. Matter 19 315220
Masao Ogata 2007 J. Phys.: Condens. Matter 19 145282
C Gollwitzer et al 2006 J. Phys.: Condens. Matter 18 S2643