S Caliskan and M Kumru 2007 J. Phys.: Condens. Matter 19 076205 doi:10.1088/0953-8984/19/7/076205
S Caliskan and M Kumru
Show affiliationsA spin field effect transistor (FET) made of a nonballistic quantum wire with a single transport channel is considered in the presence of a magnetic field. The magnetic field includes either the externally applied field or the stray field due to ferromagnetic contacts used as injector and collector. When a magnetic field is applied the conductance fluctuations alter the spin precession and moreover spin flip occurs if the magnetic field is perpendicular to the Rashba field. Necessary conditions for a successful spin FET operation is obtained in the presence of a magnetic field.
Issue 7 (21 February 2007)
Received 11 October 2006, in final form 7 December 2006
Published 2 February 2007
S Caliskan and M Kumru 2007 J. Phys.: Condens. Matter 19 076205
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