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Mn-dopant-induced effects in Zn1−xMnxO compounds

S Riyadi1, Muafif1, A A Nugroho1, A Rusydi1,2 and M O Tjia1

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An experimental study on Mn-dopant-induced effects in Zn1−xMnxO was performed for samples with x = 0.02, 0.04, 0.06, and 0.08, which were prepared by solid state reaction at 1200 °C. The result of x-ray diffraction refinement analysis did not turn up evidence of MnxOy cluster inclusion over the entire doping range, while the structural parameter variations indicate a solubility limit of about 6% for Mn2+ and incorporation of Mn ions of higher valency at higher dopant levels. The magnetization data exhibit mostly intrinsic antiferromagnetic instead of ferromagnetic properties, as predicted by more recent theoretical works. The substitutional incorporation of the Mn in ZnO was further confirmed by the associated broad-band photoluminescence spectra. The suggested incorporation of Mn ions of higher valency at higher dopant concentration was also supported by the related x-ray photoemission data, and in agreement with a previous theoretical prediction.


PACS

75.60.Ej Magnetization curves, hysteresis, Barkhausen and related effects

79.60.-i Photoemission and photoelectron spectra

78.55.Et II-VI semiconductors

75.50.Pp Magnetic semiconductors

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 47 (28 November 2007)

Received 2 July 2007, in final form 11 October 2007

Published 1 November 2007



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