A V Kolobov et al 2007 J. Phys.: Condens. Matter 19 455209 doi:10.1088/0953-8984/19/45/455209
A V Kolobov1,2, A S Mishchenko3,4, P Fons1, S M Yakubenya4 and J Tominaga1
Show affiliationsWe propose that the driving force of the ultrafast crystalline-to-amorphous transition in phase-change memory alloys is caused by strained bonds existing in the (metastable) crystalline phase. For the prototypical example of Ge2Sb2Te5, we demonstrate that upon breaking of the longer Ge–Te bond by photoexcitation, a Ge ion is shot from an octahedral crystalline to a tetrahedral amorphous position by the uncompensated force of strained short bonds. Subsequent lattice relaxation stabilizes the tetrahedral surroundings of the Ge atoms and ensures the long-term stability of the optically induced phase.
Issue 45 (14 November 2007)
Received 11 September 2007
Published 24 October 2007
A V Kolobov et al 2007 J. Phys.: Condens. Matter 19 455209
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