A K Hüttel et al 2007 J. Phys.: Condens. Matter 19 236202 doi:10.1088/0953-8984/19/23/236202
A K Hüttel1,3, K Eberl2,4 and S Ludwig1
Show affiliationsQuasi-static transport measurements are employed to characterize a few-electron quantum dot electrostatically defined in a GaAs/AlGaAs heterostructure. The gate geometry allows observations on one and the same electron droplet within a wide range of coupling strengths to the leads. The weak coupling regime is described by discrete quantum states. At strong interaction with the leads, Kondo phenomena are observed as a function of a magnetic field. By varying the gate voltages the electron droplet can, in addition, be distorted into a double quantum dot with a strong interdot tunnel coupling while keeping track of the number of trapped electrons.
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
73.23.Hk Coulomb blockade; single-electron tunneling
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
Condensed matter: electrical, magnetic and optical
Issue 23 (13 June 2007)
Received 31 January 2007, in final form 9 April 2007
Published 8 May 2007
A K Hüttel et al 2007 J. Phys.: Condens. Matter 19 236202
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