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Quantum efficiency coefficient for photogeneration of carriers in gallium sulphide single crystals

M Szałajko1 and M Nowak

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This paper presents investigations of the quantum efficiency coefficient for the photogeneration of carriers in gallium sulphide (GaS) single crystals. Therefore the spectral dependences (between 420 and 550 nm) of photoconductivity (σPC) were measured for temperatures from 80 to 333 K and for different light intensities. Since σPC depends on the absorption and reflection coefficients, these parameters were determined in the same range of temperatures. The least-squares method was applied to fit the experimental σPC data with appropriate theoretical dependence. From this fitting, spectral dependences of quantum efficiency coefficients for different temperatures and different light intensities were obtained. A comparison of the values of absorption coefficient obtained from the measurements of optical transmittance and from evaluation of the quantum efficiency coefficient is presented.


PACS

72.40.+w Photoconduction and photovoltaic effects

72.80.Jc Other crystalline inorganic semiconductors

78.20.Ci Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity)

72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 19 (16 May 2007)

Received 13 December 2006, in final form 14 December 2006

Published 19 April 2007



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