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Optical effects of annealing on Yb-doped Y2SiO5 thin films

A Denoyer1, S Jandl1, F Thibault2 and D Pelenc2

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In this paper we investigate the optical effects of annealing under an oxygen atmosphere of Yb-doped Y2SiO5 thin films grown by liquid phase epitaxy. Infrared transmission, particularly adapted to thin film characterizations by means of Yb3+ crystal field excitations, is used to single out the effects of annealing. For instance, absorption intensities increase by ~10% and disorder in Yb3+ substitution is reduced. Micro-Raman backscattering measurements detect no particular defects in as-grown and annealed thin films.


PACS

78.30.Hv Other nonmetallic inorganics

81.15.Lm Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids)

78.66.Nk Insulators

71.70.Ch Crystal and ligand fields

81.40.Tv Optical and dielectric properties (related to treatment conditions)

81.40.Ef Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization

Subjects

Condensed matter: electrical, magnetic and optical

Surfaces, interfaces and thin films

Condensed matter: structural, mechanical & thermal

Dates

Issue 15 (16 April 2007)

Received 8 December 2006, in final form 6 March 2007

Published 26 March 2007



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