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Conductance modulation of a nonballistic Datta–Das spin field effect transistor

S Caliskan

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A Datta–Das spin field effect transistor (FET) made of a nonballistic quantum wire with a single transport channel is considered. Although there is no spin relaxation and the spin precession is not influenced by elastic scattering, successful spin FET operation can still be prevented by the conductance fluctuations. The necessary condition for the desired spin FET operation is obtained.


PACS

73.63.Nm Quantum wires

85.30.Tv Field effect devices

85.35.Be Quantum well devices (quantum dots, quantum wires, etc.)

Subjects

Electronics and devices

Semiconductors

Nanoscale science and low-D systems

Dates

Issue 46 (22 November 2006)

Received 9 May 2006, in final form 9 August 2006

Published 1 November 2006



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