T Ito et al 2006 J. Phys.: Condens. Matter 18 6009 doi:10.1088/0953-8984/18/26/019
Improvement in electrical properties of hafnium and zirconium silicates by postnitriding
T Ito1, H Kato2, T Nango1 and Y Ohki1
Show affiliationsHafnium and zirconium silicate films were deposited on a silicon substrate and the effects of postannealing on their electrical properties were investigated. When the films are postannealed in nitrogen monoxide (NO), the leakage current becomes lower by more than one order of magnitude as compared with that of the as-deposited films. The capacitance–voltage (C–V) hysteresis width is also decreased drastically by the NO postannealing. From electron spin resonance spectroscopy, it is indicated that paramagnetic defects at the interface between the film and the substrate are responsible for the leakage current and the C–V hysteresis. It is also indicated by x-ray photoelectron spectroscopy that the postnitridation effectively terminates these interface defects and contributes to the improvement in electrical properties.
- PACS
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76.30.-v Electron paramagnetic resonance and relaxation
79.60.Dp Adsorbed layers and thin films
81.15.Gh Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, etc.)
- Subjects
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Condensed matter: electrical, magnetic and optical
- Dates
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Issue 26 (5 July 2006)
Received 15 February 2006, in final form 6 May 2006
Published 19 June 2006
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Improvement in electrical properties of hafnium and zirconium silicates by postnitriding
T Ito et al 2006 J. Phys.: Condens. Matter 18 6009
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