C L Lu et al 2006 J. Phys.: Condens. Matter 18 5849 doi:10.1088/0953-8984/18/26/005
Low-energy electronic properties of the AB-stacked few-layer graphites
C L Lu1, C P Chang2,3, Y C Huang1, J M Lu4,5, C C Hwang5 and M F Lin1,3
Show affiliationsIn the presence of a perpendicular electric field, the low-energy electronic properties of the AB-stacked N-layer graphites with layer number N = 2, 3, and 4, respectively, are examined through the tight-binding model. The interlayer interactions, the number of layers, and the field strength are closely related to them. The interlayer interactions can significantly change the energy dispersions and produce new band-edge states. Bi-layer and four-layer graphites are two-dimensional semimetals due to a tiny overlap between the valence and conduction bands, while tri-layer graphite is a narrow-gap semiconductor. The electric field affects the low-energy electronic properties: the production of oscillating bands, the cause of subband (anti)crossing, the change in subband spacing, and the increase in band-edge states. Most importantly, the aforementioned effects are revealed completely in the density of states, e.g. the generation of special structures, the shift in peak position, the change in peak height, and the alteration of the band gap.
- PACS
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71.20.Tx Fullerenes and related materials; intercalation compounds
- Subjects
- Dates
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Issue 26 (5 July 2006)
Received 26 February 2006, in final form 29 April 2006
Published 16 June 2006
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Low-energy electronic properties of the AB-stacked few-layer graphites
C L Lu et al 2006 J. Phys.: Condens. Matter 18 5849
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