Murat Durandurdu 2006 J. Phys.: Condens. Matter 18 4887 doi:10.1088/0953-8984/18/20/013
Transition pathway in GaAs under uniaxial stress: an ab initio study
Murat Durandurdu
Show affiliationsWe study the behaviour of GaAs under a uniaxial compression using an ab initio constant-pressure technique and find that GaAs undergoes a first-order phase transition to a side-disordered orthorhombic Imm 2 structure via an intermediate state having the space group of 
. The transition pathway and mechanism under uniaxial stress are found to be considerably different from those under the hydrostatic compression.
- PACS
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61.50.Ks Crystallographic aspects of phase transformations; pressure effects
64.60.Cn Order–disorder transformations
71.20.Nr Semiconductor compounds
61.50.Ah Theory of crystal structure, crystal symmetry; calculations and modeling
- Subjects
- Dates
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Issue 20 (24 May 2006)
Received 28 March 2006, in final form 17 April 2006
Published 2 May 2006
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Transition pathway in GaAs under uniaxial stress: an ab initio study
Murat Durandurdu 2006 J. Phys.: Condens. Matter 18 4887
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Search for new particles decaying into electron pairs of mass below 100 MeV/c2
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