B I Lembrikov et al 2006 J. Phys.: Condens. Matter 18 3817 doi:10.1088/0953-8984/18/15/024
B I Lembrikov1,2, P Malits1,2, Moti Haridim1,2, E Potemska2 and I D Vagner1,2,3
Show affiliationsThe ambipolar lateral diffusion of photo-induced charge carriers restricted in a plane of a quantum well (QW) under a moderate (non-quantizing) magnetic field is studied theoretically in the framework of the drift-diffusion model. The continuity equation for this case is solved exactly. The analytical expressions for the concentration of photo-induced electrons and the built-in electric field in the practically important cases of uniform and bell-shaped light beams are obtained in a closed form. It is shown that the ambipolar lateral diffusion of photo-induced charge carriers can be suppressed in InGaAs/GaAs QWs by a moderate magnetic field of ~0.5 mT.
66.30.Dn Theory of diffusion and ionic conduction in solids
Condensed matter: electrical, magnetic and optical
Surfaces, interfaces and thin films
Issue 15 (19 April 2006)
Received 16 February 2006, in final form 8 March 2006
Published 30 March 2006
B I Lembrikov et al 2006 J. Phys.: Condens. Matter 18 3817
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