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Ambipolar lateral diffusion of photo-induced carriers in a moderate magnetic field

B I Lembrikov1,2, P Malits1,2, Moti Haridim1,2, E Potemska2 and I D Vagner1,2,3

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The ambipolar lateral diffusion of photo-induced charge carriers restricted in a plane of a quantum well (QW) under a moderate (non-quantizing) magnetic field is studied theoretically in the framework of the drift-diffusion model. The continuity equation for this case is solved exactly. The analytical expressions for the concentration of photo-induced electrons and the built-in electric field in the practically important cases of uniform and bell-shaped light beams are obtained in a closed form. It is shown that the ambipolar lateral diffusion of photo-induced charge carriers can be suppressed in InGaAs/GaAs QWs by a moderate magnetic field of ~0.5 mT.


PACS

66.30.Dn Theory of diffusion and ionic conduction in solids

72.20.My Galvanomagnetic and other magnetotransport effects

68.65.Fg Quantum wells

73.63.Hs Quantum wells

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Condensed matter: structural, mechanical & thermal

Dates

Issue 15 (19 April 2006)

Received 16 February 2006, in final form 8 March 2006

Published 30 March 2006



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