Wen-bin Fan et al 2006 J. Phys.: Condens. Matter 18 3367 doi:10.1088/0953-8984/18/13/004
The effect of redeposition on the ion flux dependence of Si dot pattern formation during ion sputter erosion
Wen-bin Fan1, Li Ling2, Le-jun Qi1, Wei-qing Li1, Hai-tong Sun1, Chang-xin Gu2, You-yuan Zhao1 and Ming Lu1
Show affiliationsWe report an ion flux dependence study of the Si dot pattern formed on Si(100) by Ar+ ion sputtering with the ion energy being 1.5 keV, ion dose 5 × 1017 ions cm−2, and ion flux ranging from 280 to 1100 µA cm−2. Experimental results show that the lateral dot diameter d and the ion flux f basically follow the relationship of 
, and the surface roughness w decreases with increasing f in an exponential decay manner. Simulations based on a widely accepted continuum model, namely the noisy Kuramoto–Sivashinsky equation, reproduced the trend for d versus f but failed to explain that for w versus f. A redeposition consideration was then suggested. It is found that with this correction not only are the d–f and w–f relationships well explained, but the simulated surface morphology bears closer resemblance to the experimental one as well. The effect of redeposition becomes important for f> ~130 µA cm−2 as derived in this work.
- PACS
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81.16.Rf Nanoscale pattern formation
68.35.B- Structure of clean surfaces (and surface reconstruction)
68.37.Ps Atomic force microscopy (AFM)
68.49.Sf Ion scattering from surfaces (charge transfer, sputtering, SIMS)
- Subjects
- Dates
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Issue 13 (5 April 2006)
Received 31 October 2005, in final form 6 February 2006
Published 13 March 2006
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The effect of redeposition on the ion flux dependence of Si dot pattern formation during ion sputter erosion
Wen-bin Fan et al 2006 J. Phys.: Condens. Matter 18 3367
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