A G Mark et al 2005 J. Phys.: Condens. Matter 17 571 doi:10.1088/0953-8984/17/4/001
A G Mark1, J A Lipton-Duffin1, J M MacLeod1, R H Miwa2, G P Srivastava3 and A B McLean1
Show affiliationsA Bi 2 × n surface net was grown on the Si(001) surface and studied with inverse photoemission, scanning tunnelling microscopy and ab initio and empirical pseudopotential calculations. The experiments demonstrated that Bi adsorption eliminates the dimer related π1* and π2* surface states, produced by correlated dimer buckling, leaving the bulk bandgap clear of unoccupied surface states. Ab initio calculations support this observation and demonstrate that the surface states derived from the formation of symmetric Bi dimers do not penetrate the fundamental bandgap of bulk Si. Since symmetric Bi dimers are an important structural component of the recently discovered Bi nanolines, that self-organize on Si(001) above the Bi desorption temperature, a connection will be made between our findings and the electronic structure of the nanolines.
78.70.-g Interactions of particles and radiation with matter
71.20.Mq Elemental semiconductors
73.20.At Surface states, band structure, electron density of states
68.47.Fg Semiconductor surfaces
68.37.Ef Scanning tunneling microscopy (including chemistry induced with STM)
Issue 4 (2 February 2005)
Received 2 October 2004, in final form 29 November 2004
Published 14 January 2005
A G Mark et al 2005 J. Phys.: Condens. Matter 17 571
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