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Universal features of localized eigenstates in disordered systems

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J J Ludlam1, S N Taraskin1, S R Elliott1 and D A Drabold2

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[1]

Anderson universality in a model of disordered phonons

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Urbach tails of amorphous silicon

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Multifractality of instantaneous normal modes at mobility edges

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Hidden structure in amorphous solids

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Complexity of two-dimensional quasimodes at the transition from weak scattering to Anderson localization

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Localization-delocalization transition in Hessian matrices of topologically disordered systems

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Static and dynamic properties of hydrogenated amorphous silicon with voids

S. Chakraborty and D. A. Drabold  Physical Review B 2009  79 115214
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Multifractal Analysis with the Probability Density Function at the Three-Dimensional Anderson Transition

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Topics in the theory of amorphous materials

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Semiquantitative scattering theory of amorphous materials

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Critical parameters for the disorder-induced metal-insulator transition in fcc and bcc lattices

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Atomistic Origin of Urbach Tails in Amorphous Silicon

M. Zhang et al  Physical Review Letters 2008  100 206403
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Disorder and instability processes in amorphous conducting oxides

John Robertson  physica status solidi (b) 2008 
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Ab initio estimate of temperature dependence of electrical conductivity in a model amorphous material: Hydrogenated amorphous silicon

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Ab initio models of amorphous Si_{1−x}Ge_{x}:H

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