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High temperature self-assembly of Ag nanowires on vicinal Si(001)

K R Roos1, K L Roos2, M Horn-von Hoegen3 and F-J Meyer zu Heringdorf3

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We have used low energy electron microscopy (LEEM) and photo emission electron microscopy (PEEM) to study the high temperature (620 °C) self-assembly of Ag nanowires on vicinal Si(001), miscut 4° in the [110] direction. After formation of an initial wetting layer, growth of wire-like structures proceeds with subsequent deposition. Simultaneously, compact islands form and the nanowires comprise only a minority of the total Ag deposit. The wires display quasi-one-dimensional behaviour as their length is observed to increase while their width remains constant. The lengths of the wires can be controlled and we have routinely grown wires longer than 100 µm. A kinetically limiting process, wherein mass transport is suppressed in the direction normal to the direction of elongation, is identified as a contributor to the growth of the nanowires.


PACS

81.16.Dn Self-assembly

68.55.A- Nucleation and growth

79.60.Jv Interfaces; heterostructures; nanostructures

68.37.Nq Low energy electron microscopy (LEEM)

68.47.Fg Semiconductor surfaces

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Surfaces, interfaces and thin films

Nanoscale science and low-D systems

Dates

Issue 16 (27 April 2005)

Received 9 December 2004, in final form 9 December 2004

Published 8 April 2005



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