C-T Liang et al 2004 J. Phys.: Condens. Matter 16 1095 doi:10.1088/0953-8984/16/7/009
Measurements of composite fermion conductivity dependence on carrier density
C-T Liang1,4, M Y Simmons2,3, D A Ritchie2 and M Pepper2
Show affiliationsWe present the first experimental study of the carrier density dependence of the composite fermion conductivity σxxCF at Landau level filling factors ν = 1/2 and 3/2 in high-quality front-gated GaAs/Al0.33Ga0.67As heterostructures. Extracting α from the power law 
shows that 
. The measured 
is placed between the predicted value 3/4 in the strong random magnetic field regime, and 3/2 in the weak random magnetic field regime. Comparisons between our results and theory are discussed.
- PACS
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71.10.Pm Fermions in reduced dimensions (anyons, composite fermions, Luttinger liquid, etc.)
73.40.Kp III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
- Subjects
- Dates
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Issue 7 (25 February 2004)
Received 20 November 2003
Published 6 February 2004
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Measurements of composite fermion conductivity dependence on carrier density
C-T Liang et al 2004 J. Phys.: Condens. Matter 16 1095
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