L M Kettle et al 2004 J. Phys.: Condens. Matter 16 1011 doi:10.1088/0953-8984/16/7/001
L M Kettle1,2,5, H-S Goan3, Sean C Smith2, L C L Hollenberg4 and C J Wellard4
Show affiliationsWe calculate the electron exchange coupling for a phosphorus donor pair in silicon perturbed by a J-gate potential and the boundary effects of the silicon host geometry. In addition to the electron–electron exchange interaction we also calculate the contact hyperfine interaction between the donor nucleus and electron as a function of the varying experimental conditions. Donor separation, depth of the P nuclei below the silicon oxide layer and J-gate voltage become decisive factors in determining the strength of both the exchange coupling and hyperfine interaction—both crucial components for qubit operations in the Kane quantum computer. These calculations were performed using an anisotropic effective-mass Hamiltonian approach. The behaviour of the donor exchange coupling as a function of the parameters varied in this work provides relevant information for the experimental design of these devices.
03.67.Lx Quantum computation architectures and implementations
Issue 7 (25 February 2004)
Received 6 October 2003
Published 6 February 2004
L M Kettle et al 2004 J. Phys.: Condens. Matter 16 1011
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