D Wortmann et al 2004 J. Phys.: Condens. Matter 16 S5819 doi:10.1088/0953-8984/16/48/056
D Wortmann1,2, G Bihlmayer2 and S Blügel2
Show affiliationsThe tunnel-magneto-resistance (TMR) effect has been extensively studied in the last couple of years. While some experiments showed a strong dependence on the metal–insulator interface in these systems, most theoretical work gave little emphasis to the complicated interplay between electronic structure, atomic structure and the tunnelling process. We present calculations of the atomic structure of Fe/MgO/Fe(001) interfaces and its influence on the electronic structure. The tunnel current is calculated using the Landauer approach to describe the electron transport.
75.70.Cn Magnetic properties of interfaces (multilayers, superlattices, heterostructures)
75.47.-m Magnetotransport phenomena; materials for magnetotransport
Issue 48 (8 December 2004)
Received 17 May 2004
Published 19 November 2004
D Wortmann et al 2004 J. Phys.: Condens. Matter 16 S5819
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