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First principles study of the ferromagnetism in Ga1−xMnxAs semiconductors

Antônio J R da Silva1, A Fazzio1, Raimundo R dos Santos2 and Luiz E Oliveira3

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We have performed ab initio calculations within the density-functional theory for Ga1−xMnxAs diluted semiconductors. Total energy results unambiguously show that a quasi-localized \downarrow hole, with predominant p-like character, surrounds the fully polarized Mn \uparrow
d5-electrons. The calculations indicate that the holes form a relatively dispersionless impurity band, thus rendering effective-mass descriptions of hole states open to challenge. We obtain estimates both for the s = 1/2 hole and S = 5/2 Mn exchange coupling, and for the distance dependence of the effective Mn–Mn exchange interaction. The results demonstrate that the effective Mn–Mn coupling is always ferromagnetic, and thus non-RKKY, and is intermediated by the antiferromagnetic coupling of each Mn spin to the holes.


PACS

71.15.Mb Density functional theory, local density approximation, gradient and other corrections

75.50.Pp Magnetic semiconductors

71.55.Eq III-V semiconductors

75.30.Et Exchange and superexchange interactions

Subjects

Condensed matter: electrical, magnetic and optical

Semiconductors

Dates

Issue 46 (24 November 2004)

Received 16 August 2004, in final form 11 October 2004

Published 5 November 2004



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