E A Schiff 2004 J. Phys.: Condens. Matter 16 S5265 doi:10.1088/0953-8984/16/44/023
E A Schiff
Show affiliationsPublished electron and hole drift-mobility measurements in hydrogenated amorphous silicon (a-Si:H), amorphous silicon alloys (a-SiGe:H and a-SiC:H), and microcrystalline silicon (μc-Si:H) are analysed in terms of the exponential bandtail trapping model. A three-parameter model was employed using an exponential bandtail width ΔE, the band mobility μ0, and the attempt-to-escape frequency ν. Low-temperature measurements indicate a value around μ0 = 1 cm2 V−1 s−1 for both the conduction and valence bands over the entire range of materials. High temperature-measurements for electrons in a-Si:H suggest a larger value of 7 cm2 V−1 s−1. These properties and those of the frequency ν are discussed as possible attributes of a mobility edge.
72.20.Ee Mobility edges; hopping transport
72.20.Jv Charge carriers: generation, recombination, lifetime, and trapping
Issue 44 (10 November 2004)
Received 26 August 2004, in final form 27 August 2004
Published 22 October 2004
E A Schiff 2004 J. Phys.: Condens. Matter 16 S5265
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