M L Benkhedir et al 2004 J. Phys.: Condens. Matter 16 S5253 doi:10.1088/0953-8984/16/44/022
Electronic density of states in amorphous selenium
M L Benkhedir, M Brinza and G J Adriaenssens
Show affiliationsSteady-state and transient photoconductivity methods are used to investigate the electronic density of states in evaporated layers of amorphous selenium. From the temperature dependence of the steady-state photocurrent and, independently, from an analysis of the post-transit currents of time-of-flight transients, energy levels in the gap at 1.43 ± 0.02 eV and 0.40 ± 0.02 eV above the valence band have been determined for the occupied state of the negative-U centres. An absorption band around 1.50 eV is seen in the spectral distribution of the photocurrent. The distribution of tail states may—to first approximation—be described by a steep exponential with a characteristic width of 
meV at the valence band and a more steeply declining functional of similar width at the conduction band.
- PACS
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72.40.+w Photoconduction and photovoltaic effects
71.23.Cq Amorphous semiconductors, metallic glasses, glasses
- Subjects
- Dates
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Issue 44 (10 November 2004)
Received 14 August 2004
Published 22 October 2004
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Electronic density of states in amorphous selenium
M L Benkhedir et al 2004 J. Phys.: Condens. Matter 16 S5253
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